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型号	厂家	描述	日期

NE85618	California Eastern Laboratories(CEL/NEC)	0.05 GHz to 5.0 GHz. Vce = 2.5V to 10V. Ic = 3 mA to 10 mA	20070107
NE85618	California Eastern Laboratories(CEL/NEC)	[替换型号]=Toshiba:2SC5088 \| RF & MICROWAVE PRODUCT	20051222
NE85618	California Eastern Laboratories(CEL/NEC)	[替换型号]=Toshiba:2SC4842 \| RF & MICROWAVE PRODUCT	20051222
NE85618	California Eastern Laboratories(CEL/NEC)	[替换型号]=Siemens:BFP196W \| RF & MICROWAVE PRODUCT	20051222
NE85618	California Eastern Laboratories(CEL/NEC)	[替换型号]=Siemens:BFP193W \| RF & MICROWAVE PRODUCT	20051222
NE85618	California Eastern Laboratories(CEL/NEC)	[替换型号]=NEC:2SC5011 \| RF & MICROWAVE PRODUCT	20051222
NE856 SERIES	California Eastern Laboratories(CEL/NEC)	NPN Silicon RF Transistor NE85600. NE85618. NE85619. NE85630. NE85632. NE85633. NE85634. NE85639 (338)	20051222
NE85618	NEC Electron Devices	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-343R	20031022
NE85618-T1	California Eastern Laboratories Inc	BJT	20030928
2SC5011 (NE85618)	NEC	Discrete	20030317
NE85618NE85618	CEL	[替换型号]Possible Analogue:Infineon BFP196WBFP196W	20120119
BFP196WBFP196W	Infineon	[替换型号]Possible Analogue:CEL NE85618NE85618	20120118
BFP196W	Infineon	[替换型号]Pin-to-Pin Replacement:NEC NE85618	20120118
BFP193W	Infineon	[替换型号]Pin-to-Pin Replacement:NEC NE85618	20120118
BFP136W	Infineon	[替换型号]Pin-to-Pin Replacement:NEC NE85618	20120118
2SC5088	Toshiba	[替换型号]Pin-to-Pin Replacement:NEC NE85618	20120118
2SC4842	Toshiba	[替换型号]Pin-to-Pin Replacement:NEC NE85618	20120118
NE85618	NEC	[替换型号]Pin-to-Pin Replacement Toshiba 2SC4842	20120117
2SC5011	NEC	[替换型号]Functional Equivalent Infineon NE85618	20120117
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